MKI 75-06 A7
MKI 75-06 A7T
10.0
100
5
500
E on
mJ
7.5
t d(on)
ns
75
t
E off
mJ
4
E off
ns
400
t
5.0
2.5
0.0
E on
t r
V CE = 300V
V GE = ±15V
R G = 18 ?
T VJ = 125°C
50
25
0
3
2
1
0
t d(off)
V CE = 300V
V GE = ±15V
R G = 18 ?
T VJ = 125°C
t f
300
200
100
0
0
40
80
I C
120
A
160
0
40
80
120 A
I C
160
B3
Fig. 7 Typ. turn on energy and switching
times versus collector current
Fig. 8
Typ. turn off energy and switching
times versus collector current
10
100
5
500
E on
mJ
8
6
t d(on)
t r
ns
80
60
t
mJ
4
E off
3
t d(off)
E off
ns
400
300
t
4
V CE = 300V
V GE = ±15V
40
2
V CE = 300V
V GE = ±15V
200
I C
I C
2
E on
= 75A
T VJ = 125°C
20
1
= 75A
T VJ = 125°C
100
0
0
10
20
30
40
0
50 ? 60
0
0
10
20
30
40
t f
0
50 ? 60
R G
R G
160
A
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
1
K/W
Fig.10
Typ. turn off energy and switching
times versus gate resistor
diode
IGBT
I CM
120
80
0.1
Z thJC
0.01
40
0
R G = 18 ?
T VJ = 125°C
0.001
0.0001
single pulse
MWI7506A7
0
100
200
300
400
500
600
700 V
0.00001 0.0001 0.001
0.01
0.1
1
s 10
V CE
Fig. 11 Reverse biased safe operating area
RBSOA
? 2005 IXYS All rights reserved
t
Fig. 12 Typ. transient thermal impedance
4-4
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